| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
VBsemi Electronics Co.,... |
STN4546S8RG
|
1Mb/8P |
N-Channel 100-V (D-S) MOSFET
|
SHENZHEN DOINGTER SEMIC... |
STN454D
|
635Kb/5P |
N-Channel MOSFET uses advanced trench technology
|
Stanson Technology |
STN454D
|
556Kb/10P |
N Channel Enhancement Mode MOSFET
|
|
STN4526
|
616Kb/6P |
STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
VBsemi Electronics Co.,... |
STN4526S8RG
|
1Mb/8P |
N-Channel 100-V (D-S) MOSFET
|
Stanson Technology |
STN4536
|
708Kb/6P |
Due N Channel Enhancement Mode MOSFET
|
|
STN456DN
|
1,007Kb/7P |
N Channel Enhancement Mode MOSFET
|
|
STN4102
|
410Kb/6P |
N Channel Enhancement Mode MOSFET
|
SHENZHEN DOINGTER SEMIC... |
STN4102
|
756Kb/5P |
N-Channel MOSFET uses advanced trench technology
|
VBsemi Electronics Co.,... |
STN4102
|
1,018Kb/8P |
N-Channel 30-V (D-S) MOSFET
|
Stanson Technology |
STN410D
|
498Kb/8P |
N Channel Enhancement Mode MOSFET
|
SHENZHEN DOINGTER SEMIC... |
STN410D
|
986Kb/4P |
N-Channel MOSFET uses advanced trench technology
|
Stanson Technology |
STN4110
|
876Kb/8P |
N Channel Enhancement Mode MOSFET
|
SHENZHEN DOINGTER SEMIC... |
STN4110
|
1Mb/5P |
N-Channel MOSFET uses advanced SGT technology
|
|
STN4130
|
2Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
VBsemi Electronics Co.,... |
STN4130
|
898Kb/6P |
N-Channel 60-V (D-S) MOSFET
|
Stanson Technology |
STN4130
|
1Mb/7P |
N Channel Enhancement Mode MOSFET
|
|
STN4186D
|
754Kb/9P |
N Channel Enhancement Mode MOSFET
|
SHENZHEN DOINGTER SEMIC... |
STN4186D
|
2Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
VBsemi Electronics Co.,... |
STN4186D
|
1,003Kb/7P |
N-Channel 40-V (D-S) MOSFET
|
Italian ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand