VB20120C Scheda tecnica, PDF

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Vishay Siliconix	VB20120C	285Kb/6P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Revision: 23-Feb-2024
Vishay Siliconix	VB20120C-E3	285Kb/6P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Revision: 23-Feb-2024
Inchange Semiconductor ...	VB20120C-E3	315Kb/2P	Schotty Barrier Diode
Vishay Siliconix	VB20120C-E3/4W	163Kb/5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 24-Jun-09
	VB20120C-E3/4W	285Kb/6P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Revision: 23-Feb-2024
	VB20120C-E3/8W	163Kb/5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 24-Jun-09
	VB20120C-E3/8W	285Kb/6P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Revision: 23-Feb-2024
	VB20120C-M3	89Kb/4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A 14-May-13
	VB20120C-M3	103Kb/4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A 19-Jun-2018
Inchange Semiconductor ...	VB20120C-M3	315Kb/2P	Schotty Barrier Diode
Vishay Siliconix	VB20120C-M3	79Kb/4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 14-May-13
Vishay Siliconix	VB20120C-M3	103Kb/4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A 19-Jun-2018

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