VB30100C Scheda tecnica, PDF

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Vishay Siliconix	VB30100C	167Kb/5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A 19-May-08
	VB30100C	165Kb/6P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 24-Jun-09
	VB30100C	102Kb/4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A 20-Jun-2018
Inchange Semiconductor ...	VB30100C	399Kb/3P	Schottky Barrier Rectifier
Vishay Siliconix	VB30100C-E3	152Kb/5P	Dual High Voltage Trench MOS Barrier Schottky Rectifier 11-Sep-13
	VB30100C-E3	178Kb/6P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A 13-Dec-16
	VB30100C-E3	214Kb/6P	Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.455 V at IF = 5 A 15-Oct-2019
Inchange Semiconductor ...	VB30100C-E3	315Kb/2P	Schotty Barrier Diode
Vishay Siliconix	VB30100C-E3/4W	167Kb/5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A 19-May-08
	VB30100C-E3/4W	163Kb/5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 24-Jun-09
	VB30100C-E3/8W	167Kb/5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A 19-May-08
	VB30100C-E3/8W	163Kb/5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 24-Jun-09
	VB30100C-M3	90Kb/5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A 03-Jan-17
	VB30100C-M3	78Kb/4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 15-May-13
	VB30100CHM3	90Kb/5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A 03-Jan-17
	VB30100C	102Kb/4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A 20-Jun-2018

VB30100C Scheda tecnica, PDF

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