| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
 Vishay Siliconix |
VS-GA100NA60UP
|
234Kb/9P |
Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A
01-Feb-12 |
|
VS-GA100TS120UPBF
|
263Kb/10P |
Very low conduction and switching losses
26-Mar-12 |
|
VS-GA100TS60SFPBF
|
181Kb/7P |
Optimized for hard switching speed
10-Jun-15 |
|
VS-GA100TS60SFPBF
|
153Kb/7P |
“Half-Bridge” IGBT INT-A-PAK, (Standard Speed IGBT), 100 A
10-Jun-15 |
|
VS-GA100TS60SFPBF
|
153Kb/7P |
“Half-Bridge” IGBT INT-A-PAK, (Standard Speed IGBT), 100 A
10-Jun-15 |
|
VS-GA200HS60S1PBF
|
154Kb/7P |
Very low conduction losses
10-Jun-15 |
|
VS-GA200SA60UP
|
153Kb/8P |
Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A
26-Oct-11 |
|
VS-GA200TH60S
|
165Kb/7P |
High short circuit capability
10-Jun-15 |
|
VS-GA250SA60S
|
288Kb/9P |
Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A
20-May-16 |
|
VS-GA300TD60S
|
140Kb/8P |
Dual INT-A-PAK Low Profile “Half Bridge” (Standard Speed IGBT), 300 A
11-Dec-17 |
|
VS-GA400TD60S
|
140Kb/8P |
Dual INT-A-PAK Low Profile “Half Bridge” (Standard Speed IGBT), 400 A
11-Dec-17 |