| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
 Vishay Siliconix |
VSML3710
|
146Kb/8P |
High Power Infrared Emitting Diode, 940 nm RoHS Compliant, Released for Lead (Pb)-free Solder Process
25-Jan-07 |
|
VSML3710
|
141Kb/6P |
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
04-Sep-08 |
|
VSML3710
|
142Kb/6P |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
03-Nov-09 |
|
VSML3710
|
139Kb/7P |
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
22-Oct-14 |
|
VSML3710
|
138Kb/7P |
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
22-Oct-14 |
|
VSML3710
|
137Kb/7P |
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
22-Oct-14 |
|
VSML3710-GS08
|
141Kb/6P |
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
04-Sep-08 |
|
VSML3710-GS08
|
142Kb/6P |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
03-Nov-09 |
|
VSML3710-GS08
|
139Kb/7P |
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
22-Oct-14 |
|
VSML3710-GS08
|
137Kb/7P |
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
22-Oct-14 |
|
VSML3710-GS18
|
141Kb/6P |
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
04-Sep-08 |
|
VSML3710-GS18
|
142Kb/6P |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
03-Nov-09 |
|
VSML3710-GS18
|
139Kb/7P |
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
22-Oct-14 |
|
VSML3710-GS18
|
137Kb/7P |
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
22-Oct-14 |
|
VSML3710
|
141Kb/6P |
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
04-Sep-08 |
|
VSML3710
|
142Kb/6P |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
03-Nov-09 |
|
VSML3710
|
139Kb/7P |
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
22-Oct-14 |
|
VSML3710
|
138Kb/7P |
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
22-Oct-14 |
|
VSML3710
|
137Kb/7P |
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
22-Oct-14 |