| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
STMicroelectronics
|
STP7N90K5 |
729Kb/13P |
N-channel 900 V, 0.72 廓 typ., 7 A MDmesh??K5 Power MOSFET in a TO-220 package
October 2016 Rev 1 |
| STL7N6F7 |
875Kb/11P |
N-channel 60 V, 0.021 (ohm) typ., 7 A STripFET F7 Power MOSFET in a PowerFLAT 2x2 package |
| STL100N6LF6 |
2Mb/15P |
N-channel 60 V, 3.3 m廓 typ., 25 A STripFET??VI DeepGATE?? Power MOSFET in a PowerFLAT??5x6 package
March 2014 Rev 3 |
| SCTW100N120G2AG |
217Kb/11P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A,30 mΩ (typ., TJ=25 °C), in an HiP247 package
Rev 4 - July 2020 |
| STB30NM60N |
768Kb/18P |
N-channel 600 V, 0.1 廓, 25 A, MDmesh??II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK |
| STL36N60M6 |
418Kb/15P |
N-channel 600 V, 91 m廓 typ., 25 A MDmesh??M6 Power MOSFET in a PowerFLAT??8x8 HV package
Rev 4 - September 2018 |
| TSZ181H |
1Mb/26P |
Automotive-grade, very high accuracy (25 關V), high bandwidth (3 MHz), high temperature (150 째C), zero-drift operational amplifiers
Rev 2 - December 2020 |
| TSZ182H |
2Mb/24P |
Automotive-grade, very high accuracy (25 關V), high bandwidth (3 MHz), high temperature (150 째C), zero-drift operational amplifiers
Rev 1 - January 2020 |
| A1P25S12M3-F |
960Kb/16P |
ACEPACKTM 1 sixpack topology, 1200 V, 25 A, trench gate field‑stop M series IGBT with soft diode and NTC
November 2018 Rev 5 |
| A1P25S12M3 |
806Kb/15P |
ACEPACKTM 1 sixpack topology, 1200 V, 25 A, trench gate field‑stop M series IGBT with soft diode and NTC
November 2018 Rev 4 |
| SCTW35N65G2VAG |
206Kb/12P |
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package
Rev 3 - September 2020 |
| SCTW60N120G2AG |
197Kb/11P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package
Rev 1 - May 2020 |
| SCT020H120G3AG |
362Kb/14P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an H²PAK-7 package
Rev 1 - September 2022 |
| STD8NM60N |
492Kb/17P |
N-channel 600 V - 0.56 廓 - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh??Power MOSFET |
| SCT018H65G3AG |
390Kb/14P |
Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package
Rev 1 - October 2022 |
| SCT025H120G3AG |
369Kb/14P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 55 A in an H²PAK-7 package
Rev 1 - November 2022 |
| SCT070H120G3AG |
396Kb/14P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H²PAK-7 package
Rev 3 - April 2023 |
| SCTH60N120G2-7AG |
356Kb/14P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 55 A in an H²PAK-7 package
Rev 1 - August 2021 |
| SCT012H90G3AG |
390Kb/14P |
Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an H²PAK-7 package
Rev 1 - September 2022 |
| SCT040H65G3AG |
389Kb/14P |
Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package
Rev 2 - January 2022 |
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