| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
 Motorola, Inc |
MTD1N50E
|
267Kb / 10P |
TMOS POWER FET 1.0 AMPERE 500 VOLTS RDS(on) = 5.0 OHM
|
|
MTP1N50E
|
159Kb / 8P |
TMOS POWER FET 1.0 AMPERES 500 VOLTS RDS(on) = 5.0 OHM
|
 Micro Commercial Compon... |
RB551V-30
|
167Kb / 2P |
500 mA Schottky Barrier Diode 30 Volts
|
 Pan Jit International I... |
PJESD6V2LC-4-AU
|
148Kb / 6P |
Based on the electrostatic discharge immunity test
|
 STMicroelectronics |
STEVAL-ISA131V2
|
155Kb / 5P |
2.8 V - 500 mA, 6 MHz synchronous step-down converter based on ST1S15J28R
29-Jul-2014 |
 Micro Commercial Compon... |
RB551V-40
|
321Kb / 3P |
500 mA Schottky Barrier Diode 40 Volts
|
 Energizer |
EN95
|
177Kb / 1P |
Continuous discharge to 0.8 volts at 21C
|
|
NH22-175
|
163Kb / 1P |
Based on 35 mA (0.2C rate) continuous discharge to 1.0 volts
|
|
NH50-2500
|
175Kb / 1P |
Based on 500 mA (0.2C rate) continuous discharge to 1.0 volts
|
 ON Semiconductor |
NSR05301MX4
|
169Kb / 5P |
Trench-based Schottky Diode, 500 mA, 30 V
October, 2020 ??Rev. 1 |