2SC1971 Scheda tecnica(PDF) - Mitsubishi Electric Semiconductor

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2SC1971 Scheda tecnica (PDF) - Mitsubishi Electric Semiconductor

2SC1971 Datasheet PDF - Mitsubishi Electric Semiconductor


Il numero della parte	2SC1971

Scarica	2SC1971 Scarica

Grandezza file	127.93 Kbytes

Page	3 Pages

Produttore elettronici	MITSUBISHI [Mitsubishi Electric Semiconductor]

Homepage	http://www.mitsubishichips.com

Logo

Spiegazioni elettronici

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

2SC1971 Datasheet (PDF)

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Scarica Scheda tecnica

2SC1971 Datasheet PDF - Mitsubishi Electric Semiconductor


Il numero della parte	2SC1971

Scarica	2SC1971 Click to download

Grandezza file	127.93 Kbytes

Page	3 Pages

Produttore elettronici	MITSUBISHI [Mitsubishi Electric Semiconductor]

Homepage	http://www.mitsubishichips.com

Logo

Spiegazioni elettronici	NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

2SC1971 Scheda tecnica (HTML) - Mitsubishi Electric Semiconductor

2SC1971 Datasheet HTML 1Page - Mitsubishi Electric Semiconductor

2SC1971 Datasheet HTML 2Page - Mitsubishi Electric Semiconductor

2SC1971 Datasheet HTML 3Page - Mitsubishi Electric Semiconductor

2SC1971 Dettagli del prodotto

DESCRIPTION
2SC1971 is a silicon NPN epitaxail planar type transistor designed for RF Power Amplifiers on VHF band mobile radio applications.

FEATURES
● High power gain: Gpe ≥ 10dB,
   @VCC = 13.5V, Po = 6W, f = 175MHz
● Emitter ballasted construction, gold metallization for high
   reliability and good performances.
● TO-220 package similar is combinient for mounting.
● Ability to withstand more than 20:1 load
   VSWR when operated at VCC = 15.2V, Po = 6W, f = 175MHz

APPLICATION
4 to 5 watts output power amplifiers in VHF band applications.

Codice articolo simile - 2SC1971

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Advanced Semiconductor	2SC1971	63Kb / 1P	NPN SILICON RF POWER TRANSISTOR
Inchange Semiconductor ...	2SC1971	219Kb / 2P	isc Silicon NPN Power Transistor
New Jersey Semi-Conduct...	2SC1971	153Kb / 1P	silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio
eleflow technologies co...	2SC1971	269Kb / 3P	4 to 5 watts output power amplifiers in VHF band applications.

Descrizione simile - 2SC1971

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Mitsubishi Electric Sem...	2SC2053	123Kb / 3P	NPN EPITAXIAL PLANAR TYPE(for RF amplifiers on VHF band Mobile radio applications)
	2SC1946A	135Kb / 3P	NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)?
	2SC1946	130Kb / 3P	NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)?
	2SC1972	130Kb / 3P	NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)
	2SC2094	149Kb / 3P	NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers in VHF band Mobile radio applications)
	2SC1947	126Kb / 3P	NPN EPITAXIAL PLANAR TYPE(for industrial use RF power amplifiers on VHF band Mobile radio applications)?
	2SC1944	54Kb / 1P	NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)
	2SC1945	132Kb / 3P	NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)?
	2SC1969	145Kb / 3P	NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)
New Jersey Semi-Conduct...	2SC1971	153Kb / 1P	silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio

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