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2SC1947 Scheda tecnica (PDF) - Mitsubishi Electric Semiconductor

2SC1947 Datasheet PDF - Mitsubishi Electric Semiconductor
Il numero della parte 2SC1947
Scarica  2SC1947 Scarica
Grandezza file   126.18 Kbytes
Page   3 Pages
Produttore elettronici  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor
Spiegazioni elettronici NPN EPITAXIAL PLANAR TYPE(for industrial use RF power amplifiers on VHF band Mobile radio applications)?

2SC1947 Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
2SC1947 Datasheet PDF - Mitsubishi Electric Semiconductor

Il numero della parte 2SC1947
Scarica  2SC1947 Click to download

Grandezza file   126.18 Kbytes
Page   3 Pages
Produttore elettronici  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor
Spiegazioni elettronici NPN EPITAXIAL PLANAR TYPE(for industrial use RF power amplifiers on VHF band Mobile radio applications)?

2SC1947 Scheda tecnica (HTML) - Mitsubishi Electric Semiconductor


2SC1947 Dettagli del prodotto

DESCRIPTION
2SC1947 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on VHF band mobile radio applications.

FEATURES
● High power gain: Gpe ≥ 10.7dB
   @VCC = 13.5V, PO = 3.5W, f = 175MHz
● TO-39 metal seeled package for high reliability.
● Emitter electrode is connected electrically to the case

APPLICATION
   1 to 3 watt power amplifiers in VHF band mobile radio applications.




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