Motore di ricerca datesheet componenti elettronici
  Italian  ▼
ALLDATASHEETIT.COM

X  

SCT20N120AG Scheda tecnica (PDF) - STMicroelectronics

SCT20N120AG Datasheet PDF - STMicroelectronics
Il numero della parte SCT20N120AG
Scarica  SCT20N120AG Scarica
Grandezza file   487.52 Kbytes
Page   13 Pages
Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Spiegazioni elettronici Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189(typ., TJ=150 °C), in an HiP247 package

SCT20N120AG Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
SCT20N120AG Datasheet PDF - STMicroelectronics

Il numero della parte SCT20N120AG
Scarica  SCT20N120AG Click to download

Grandezza file   487.52 Kbytes
Page   13 Pages
Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Spiegazioni elettronici Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189(typ., TJ=150 °C), in an HiP247 package

SCT20N120AG Scheda tecnica (HTML) - STMicroelectronics


SCT20N120AG Dettagli del prodotto

Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industrystandard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Product status link SCT20N120AG Product summary

Features
■ AEC-Q101 qualified
■ Very tight variation of on-resistance vs. temperature
■ Very high operating temperature capability (TJ = 200 °C)
■ Very fast and robust intrinsic body diode
■ Low capacitance

Applications
■ Motor drives
■ EV chargers
■ High voltage DC-DC converters
■ Switch mode power supplies




Codice articolo simile - SCT20N120AG

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
STMicroelectronics
SCT20N120 STMICROELECTRONICS-SCT20N120 Datasheet
499Kb / 13P
Very high operating temperature capability
17-Dec-2015
logo
Inchange Semiconductor ...
SCT20N120H ISC-SCT20N120H Datasheet
369Kb / 2P
SiC N-Channel MOSFET
logo
STMicroelectronics
SCT20N120H STMICROELECTRONICS-SCT20N120H Datasheet
686Kb / 16P
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an H²PAK-2 package
13-Dec-2019
More results


Descrizione simile - SCT20N120AG

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
STMicroelectronics
SCTW100N65G2AG STMICROELECTRONICS-SCTW100N65G2AG Datasheet
423Kb / 11P
Automotive-grade silicon carbide Power MOSFET 650 V, 100 A,20 mΩ (typ., TJ=25 °C), in an HiP247™ package
21-Nov-2018
SCTW100N120G2AG STMICROELECTRONICS-SCTW100N120G2AG Datasheet
217Kb / 11P
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A,30 mΩ (typ., TJ=25 °C), in an HiP247 package
23-Jul-2020
SCTW35N65G2VAG STMICROELECTRONICS-SCTW35N65G2VAG Datasheet
206Kb / 12P
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package
09-Sep-2020
SCTW60N120G2AG STMICROELECTRONICS-SCTW60N120G2AG Datasheet
197Kb / 11P
Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package
18-May-2020
SCTWA35N65G2VAG STMICROELECTRONICS-SCTWA35N65G2VAG Datasheet
243Kb / 12P
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 long leads package
11-Aug-2020
SCTWA40N120G2AG STMICROELECTRONICS-SCTWA40N120G2AG Datasheet
257Kb / 12P
Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads package
22-Nov-2021
SCTWA60N120G2AG STMICROELECTRONICS-SCTWA60N120G2AG Datasheet
242Kb / 12P
Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package
16-Dec-2020
SCT10N120AG STMICROELECTRONICS-SCT10N120AG Datasheet
238Kb / 14P
Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package
21-Sep-2022
More results




A proposito di STMicroelectronics


STMicroelectronics è un produttore di elettronica e semiconduttori multinazionali con sede a Ginevra, in Svizzera.

La società offre una vasta gamma di prodotti tra cui microcontrollori, sensori, amplificatori di potenza e circuiti integrati per varie applicazioni nei mercati automobilistici, industriali e di consumo.

Fondata nel 1987, STMicroelectronics ha operazioni in oltre 100 paesi ed è una delle più grandi società di semiconduttori al mondo.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.




Link URL



Lei ha avuto il aiuto da alldatasheet?  [ DONATE ] 

Di alldatasheet   |   Richest di pubblicita   |   contatti   |   Privacy Policy   |   Collegamento alla scheda tecnica    |   scambio Link   |   Ricerca produttore
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com