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AS4LC4M4F1-50JC Scheda tecnica (PDF) - Alliance Semiconductor Corporation

AS4LC4M4F1-50JC Datasheet PDF - Alliance Semiconductor Corporation
Il numero della parte AS4LC4M4F1-50JC
Scarica  AS4LC4M4F1-50JC Scarica
Grandezza file   272.45 Kbytes
Page   14 Pages
Produttore elettronici  ALSC [Alliance Semiconductor Corporation]
Homepage  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation
Spiegazioni elettronici 4M횞4 CMOS DRAM (Fast Page) 3.3V Family

AS4LC4M4F1-50JC Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
AS4LC4M4F1-50JC Datasheet PDF - Alliance Semiconductor Corporation

Il numero della parte AS4LC4M4F1-50JC
Scarica  AS4LC4M4F1-50JC Click to download

Grandezza file   272.45 Kbytes
Page   14 Pages
Produttore elettronici  ALSC [Alliance Semiconductor Corporation]
Homepage  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation
Spiegazioni elettronici 4M횞4 CMOS DRAM (Fast Page) 3.3V Family

AS4LC4M4F1-50JC Scheda tecnica (HTML) - Alliance Semiconductor Corporation


AS4LC4M4F1-50JC Dettagli del prodotto

Functional description
The AS4LC4M4F1 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) device organized as 4,194,304 words × 4 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and wide operating margins at component and system levels. The Alliance 16Mb DRAM family is optimized for use as main memory in PC, workstation, router and switch applications.

Features
• Organization: 4,194,304 words × 4 bits
• High speed
    - 50/60 ns RAS access time
    - 25/30 ns column address access time
    - 12/15 ns CAS access time
• Low power consumption
    - Active: 500 mW max
    - Standby: 3.6 mW max, CMOS I/O
• Fast page mode
• Refresh
    - 2048 refresh cycles, 32 ms refresh interval
    - RAS-only or CAS-before-RAS refresh or self-refresh
• TTL-compatible, three-state I/O
• JEDEC standard package
    - 300 mil, 24/26-pin SOJ
• 3.3V power supply
• Latch-up current ≥ 200 mA
• ESD protection ≥ 2000 volts
• Industrial and commercial temperature available




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