1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra
thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
medium power capability.
NPN complement: PBSS4630PA.

1.2 Features and benefits
 Low collector-emitter saturation voltage VCEsat
 High collector current capability IC and ICM
 Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
 Exposed heat sink for excellent thermal and electrical conductivity
 Leadless small SMD plastic package with medium power capability

1.3 Applications
 Loadswitch
 Battery-driven devices
 Power management
 Charging circuits
 Power switches (e.g. motors, fans)