Description
Cree’s CGH40090PP is an unmatched, gallium nitride (GaN) high
electron mobility transistor (HEMT). The CGH40090PP, operating
from a 28 volt rail, offers a general purpose, broadband solution
to a variety of RF and microwave applications. GaN HEMTs
offer high efficiency, high gain and wide bandwidth capabilities
making the CGH40090PP ideal for linear and compressed
amplifier circuits. The transistor is available in a 4-lead flange
package
Features
• Up to 2.5 GHz Operation
• 16 dB Small Signal Gain at 2.0 GHz
• 100 W Typical PSAT
• 55% Efficiency at PSAT
• 28 V Operation