Description
Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high
electron mobility transistor (HEMT). The CGH40120F, operating
from a 28 volt rail, offers a general purpose, broadband solution
to a variety of RF and microwave applications. GaN HEMTs offer
high efficiency, high gain and wide bandwidth capabilities making
the CGH40120F ideal for linear and compressed amplifier circuits.
The transistor is available in a flange package. Package Types: 440193
PN: CGH40120F
Features
• Up to 2.5 GHz Operation
• 20 dB Small Signal Gain at 1.0 GHz
• 15 dB Small Signal Gain at 2.0 GHz
• 120 W Typical PSAT
• 70 % Efficiency at PSAT
• 28 V Operation
Applications
• 2-Way Private Radio
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear amplifiers suitable for OFDM,
W-CDMA, EDGE, CDMA waveforms