Motore di ricerca datesheet componenti elettronici
  Italian  ▼
ALLDATASHEETIT.COM

X  

Preview PDF HTML

SCT060W75G3-4AG Scheda tecnica (PDF) - STMicroelectronics
SCT060W75G3-4AG Datasheet PDF - STMicroelectronics
Il numero della parte SCT060W75G3-4AG
Scarica  SCT060W75G3-4AG Scarica
Grandezza file   204.17 Kbytes
Page   12 Pages
Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Spiegazioni elettronici Automotive-grade silicon carbide Power MOSFET 750 V, 60 mΩ typ., 30 A in an HiP247-4 package

SCT060W75G3-4AG Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
SCT060W75G3-4AG Datasheet PDF - STMicroelectronics

Il numero della parte SCT060W75G3-4AG
Scarica  SCT060W75G3-4AG Click to download

Grandezza file   204.17 Kbytes
Page   12 Pages
Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Spiegazioni elettronici Automotive-grade silicon carbide Power MOSFET 750 V, 60 mΩ typ., 30 A in an HiP247-4 package

SCT060W75G3-4AG Scheda tecnica (HTML) - STMicroelectronics


SCT060W75G3-4AG Dettagli del prodotto

Features
• AEC-Q101 qualified
• Very low RDS(on) over the entire temperature range
• High speed switching performances
• Very fast and robust intrinsic body diode
• Very high operating junction temperature capability (TJ
= 200 °C)
• Source sensing pin for increased efficiency

Applications
• DC/DC converter for EV/HEV
• Main inverter (electric traction)
• On board charger (OBC)

Description
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 3rd generation SiC MOSFET technology. The device
features a very low RDS(on) over the entire temperature range combined with low
capacitances and very high switching operations, which improve application
performance in frequency, energy efficiency, system size and weight reduction




Codice articolo simile - SCT060W75G3-4AG

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
STMicroelectronics		 SCT060W75G3AG STMICROELECTRONICS-SCT060W75G3AG Datasheet
202Kb / 12P		 Automotive-grade silicon carbide Power MOSFET 750 V, 60 mΩ typ., 30 A in an HiP247 package
12-Sep-2024
More results


Descrizione simile - SCT060W75G3-4AG

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
STMicroelectronics		 SCTW100N65G2AG STMICROELECTRONICS-SCTW100N65G2AG Datasheet
423Kb / 11P		 Automotive-grade silicon carbide Power MOSFET 650 V, 100 A,20 mΩ (typ., TJ=25 °C), in an HiP247™ package
21-Nov-2018
SCTW100N120G2AG STMICROELECTRONICS-SCTW100N120G2AG Datasheet
217Kb / 11P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A,30 mΩ (typ., TJ=25 °C), in an HiP247 package
23-Jul-2020
SCTW35N65G2VAG STMICROELECTRONICS-SCTW35N65G2VAG Datasheet
206Kb / 12P		 Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package
09-Sep-2020
SCTW60N120G2AG STMICROELECTRONICS-SCTW60N120G2AG Datasheet
197Kb / 11P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package
18-May-2020
SCTWA40N120G2AG STMICROELECTRONICS-SCTWA40N120G2AG Datasheet
257Kb / 12P		 Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads package
22-Nov-2021
SCTWA60N120G2AG STMICROELECTRONICS-SCTWA60N120G2AG Datasheet
242Kb / 12P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package
16-Dec-2020
SCT011H75G3AG STMICROELECTRONICS-SCT011H75G3AG Datasheet
395Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an H²PAK-7 package
08-Mar-2022
SCT040H65G3AG STMICROELECTRONICS-SCT040H65G3AG Datasheet
389Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package
21-Jan-2022
SCT070H120G3AG STMICROELECTRONICS-SCT070H120G3AG Datasheet
396Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H²PAK-7 package
04-Apr-2023
SCT10N120AG STMICROELECTRONICS-SCT10N120AG Datasheet
238Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package
21-Sep-2022
More results




A proposito di STMicroelectronics

STMicroelectronics è un produttore di elettronica e semiconduttori multinazionali con sede a Ginevra, in Svizzera.

La società offre una vasta gamma di prodotti tra cui microcontrollori, sensori, amplificatori di potenza e circuiti integrati per varie applicazioni nei mercati automobilistici, industriali e di consumo.

Fondata nel 1987, STMicroelectronics ha operazioni in oltre 100 paesi ed è una delle più grandi società di semiconduttori al mondo.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.




Link URL



Lei ha avuto il aiuto da alldatasheet?  [ DONATE ] 

Di alldatasheet   |   Richest di pubblicita   |   contatti   |   Privacy Policy   |   Collegamento alla scheda tecnica    |   scambio Link   |   Ricerca produttore
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com