STBV18200BY4 Scheda tecnica(PDF)

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STBV18200BY4 Scheda tecnica (PDF) - Innogration Technologies, Inc.

STBV18200BY4 Datasheet PDF - Innogration Technologies, Inc.


Il numero della parte	STBV18200BY4

Scarica	STBV18200BY4 Scarica

Grandezza file	1638.51 Kbytes

Page	6 Pages

Produttore elettronici	INNOGRATION [Innogration Technologies, Inc.]

Homepage	http://www.innogration.net/index.htm

Logo

Spiegazioni elettronici

Gallium Nitride 50V, 200W,1.3-1.8GHz RF Power Transistor

STBV18200BY4 Datasheet (PDF)

Scarica Scheda tecnica


Il numero della parte	STBV18200BY4

Scarica	STBV18200BY4 Click to download

Grandezza file	1638.51 Kbytes

Page	6 Pages

Produttore elettronici	INNOGRATION [Innogration Technologies, Inc.]

Homepage	http://www.innogration.net/index.htm

Logo

Spiegazioni elettronici	Gallium Nitride 50V, 200W,1.3-1.8GHz RF Power Transistor

STBV18200BY4 Scheda tecnica (HTML) - Innogration Technologies, Inc.

STBV18200BY4 Datasheet HTML 1Page - Innogration Technologies, Inc.

STBV18200BY4 Datasheet HTML 2Page - Innogration Technologies, Inc.

STBV18200BY4 Datasheet HTML 3Page - Innogration Technologies, Inc.

STBV18200BY4 Datasheet HTML 4Page - Innogration Technologies, Inc.

STBV18200BY4 Datasheet HTML 5Page - Innogration Technologies, Inc.

STBV18200BY4 Datasheet HTML 6Page - Innogration Technologies, Inc.

STBV18200BY4 Dettagli del prodotto

Description
The STBV18200BY4 is a 200watt Doherty pair capable, GaN HEMT, ideal for for 4G/5G cellular
applications from 1.3 to 1.8GHz..
It can be configured as asymmetrical Doherty delivering 80W average power, according to normal
8dB back off.
There is no guarantee of performance when this part is used outside of stated frequencies.

Applications
 Asymmetrical Doherty amplifier
 L band power amplifier

Codice articolo simile - STBV18200BY4

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Innogration Technologie...	STBV10350BY4	1Mb / 6P	Gallium Nitride 50V, 350W,0.6-1GHz RF Power Transistor
	STBV10500BY4	1Mb / 6P	Gallium Nitride 50V, 500W,0.6-1GHz RF Power Transistor
	STBV15600BY4	1Mb / 6P	GaN HEMT 50V, 600W,1.3-1.6GHz RF Power Transistor

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Descrizione simile - STBV18200BY4

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