1 Features
1• Independently Drives Two N-Channel MOSFETs
• Compound CMOS and Bipolar Outputs Reduce
Output Current Variation
• 5-A Sink and 3-A Source Current Capability
• Two Channels can be Connected in Parallel to
Double the Drive Current
• Independent Inputs (TTL Compatible)
• Fast Propagation Times (25 ns Typical)
• Fast Rise and Fall Times (14 ns and 12 ns Rise
and Fall, Respectively, With 2-nF Load)
• Available in Dual Noninverting, Dual Inverting and
Combination Configurations
• Supply Rail Undervoltage Lockout Protection
(UVLO)ƒ
• LM5111-4 UVLO Configured to Drive PFET
through OUT_A and NFET through OUT_B
• Pin Compatible With Industry Standard Gate
Drivers

2 Applications
• Synchronous Rectifier Gate Drivers
• Switch-mode Power Supply Gate Driver
• Solenoid and Motor Drivers

3 Description
The LM5111 Dual Gate Driver replaces industry
standard gate drivers with improved peak output
current and efficiency. Each compound output driver
stage includes MOS and bipolar transistors operating
in parallel that together sink more than 5-A peak from
capacitive loads. Combining the unique
characteristics of MOS and bipolar devices reduces
drive current variation with voltage and temperature.
Undervoltage lockout protection is also provided. The
drivers can be operated in parallel with inputs and
outputs connected to double the drive current
capability. This device is available in the SOIC
package or the thermally enhanced MSOPPowerPAD
package.