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LM5111 Scheda tecnica(PDF) 5 Page - Texas Instruments

Il numero della parte LM5111
Spiegazioni elettronici  LM5111 Dual 5-A Compound Gate Driver
PDF  30 Pages
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Produttore elettronici  TI2 [Texas Instruments]
Homepage  https://www.ti.com
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LM5111 Scheda tecnica(HTML) 5 Page - Texas Instruments

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LM5111
www.ti.com
SNVS300H – JULY 2004 – REVISED SEPTEMBER 2016
Product Folder Links: LM5111
Submit Documentation Feedback
Copyright © 2004–2016, Texas Instruments Incorporated
(1)
The output resistance specification applies to the MOS device only. The total output current capability is the sum of the MOS and
Bipolar devices.
7.5 Electrical Characteristics
TJ = −40°C to +125°C, VCC = 12 V, VEE = 0 V, No Load on OUT_A or OUT_B, unless otherwise specified.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VCC operating range
VCC−VEE
3.5
14
V
VCCR
VCC undervoltage lockout (rising)
VCC−VEE
2.3
2.9
3.5
V
VCCH
VCC undervoltage lockout hysteresis
230
mV
ICC
VCC supply current (ICC)
IN_A = IN_B = 0 V (5111-1)
1
2
mA
IN_A = IN_B = VCC (5111-2)
1
2
IN_A = VCC, IN_B = 0 V (5111-3)
1
2
CONTROL INPUTS
VIH
Logic high
2.2
V
VIL
Logic low
0.8
V
VthH
High threshold
1.3
1.75
2.2
V
VthL
Low threshold
0.8
1.35
2
V
HYS
Input hysteresis
400
mV
IIL
Input current low
IN_A=IN_B=VCC (5111-1-2-3)
–1
0.1
1
µA
IIH
Input current high
IN_B=VCC (5111-3)
10
18
25
IN_A=IN_B=VCC (5111-2)
–1
0.1
1
IN_A=IN_B=VCC (5111-1)
10
18
25
IN_A=VCC (5111-3)
–1
0.1
1
OUTPUT DRIVERS
ROH
Output resistance high
IOUT = −10 mA
(1)
30
50
Ω
ROL
Output resistance low
IOUT = + 10 mA
(1)
1.4
2.5
Ω
ISource
Peak source current
OUTA/OUTB = VCC/2,
200-ns Pulsed Current
3
A
ISink
Peak sink current
OUTA/OUTB = VCC/2,
200-ns Pulsed Current
5
A
LATCHUP PROTECTION
AEC - Q100, method 004
TJ = 150°C
500
mA
THERMAL RESISTANCE
θJA
Junction to ambient,
0 LFPM air flow
SOIC Package
170
°C/W
MSOP-PowerPAD Package
60
θJC
Junction to case
SOIC Package
70
°C/W
MSOP-PowerPAD Package
4.7
(1)
See Figure 1 and Figure 2.
7.6 Switching Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
td1
Propagation delay time low to high,
IN rising (IN to OUT)
CLOAD = 2 nF
(1)
25
40
ns
td2
Propagation delay time high to low,
IN falling (IN to OUT)
CLOAD = 2 nF
(1)
25
40
ns
tr
Rise time
CLOAD = 2 nF
(1)
14
25
ns
tf
Fall time
CLOAD = 2 nF
(1)
12
25
ns



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