Motore di ricerca datesheet componenti elettronici
  Italian  ▼
ALLDATASHEETIT.COM

X  

IS46LR16640C Scheda tecnica (PDF) - Integrated Silicon Solution, Inc

IS46LR16640C Datasheet PDF - Integrated Silicon Solution, Inc
Il numero della parte IS46LR16640C
Scarica  IS46LR16640C Scarica
Grandezza file   1952.51 Kbytes
Page   47 Pages
Produttore elettronici  ISSI [Integrated Silicon Solution, Inc]
Homepage  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
Spiegazioni elettronici 1Gb (x16, x32) Mobile DDR SDRAM

IS46LR16640C Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
IS46LR16640C Datasheet PDF - Integrated Silicon Solution, Inc

Il numero della parte IS46LR16640C
Scarica  IS46LR16640C Click to download

Grandezza file   1952.51 Kbytes
Page   47 Pages
Produttore elettronici  ISSI [Integrated Silicon Solution, Inc]
Homepage  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
Spiegazioni elettronici 1Gb (x16, x32) Mobile DDR SDRAM

IS46LR16640C Scheda tecnica (HTML) - Integrated Silicon Solution, Inc


IS46LR16640C Dettagli del prodotto

Features
• JEDEC standard 1.8V power supply.
• VDD = 1.8V, VDDQ = 1.8V
• Four internal banks for concurrent operation
• MRS cycle with address key programs
-CAS latency 2, 3 (clock)
-Burst length (2, 4, 8, 16)
-Burst type (sequential & interleave)
• Fully differential clock inputs (CK, /CK)
• All inputs except data & DM are sampled at the rising
edge of the system clock
• Data I/O transaction on both edges of data strobe
• Bidirectional data strobe per byte of data (DQS)
• DM for write masking only
• Edge aligned data & data strobe output
• Center aligned data & data strobe input
• 64ms refresh period (8K cycle)
• Auto & self refresh
• Concurrent Auto Precharge
• Maximum clock frequency up to 208MHZ
• Maximum data rate up to 416Mbps/pin
• Power Saving support
-PASR (Partial Array Self Refresh)
-Auto TCSR (Temperature Compensated Self Refresh)
-Deep Power Down Mode
-Programmable Driver Strength Controlby Full Strength or 1/2, 1/4, 1/8 or 3/4 of Full Strength
• Status Register Read (SRR)
• LVCMOS compatible inputs/outputs
• Operation Temperature:
-Commercial(TA= 0 ~ 70 °C )
-Industrial(TA= -40 ~ 85 °C )
-Automotive, A1(TA= -40 ~ 85 °C )
-Automotive, A2(TA= -40 ~ 105 °C )




Codice articolo simile - IS46LR16640C

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
Integrated Silicon Solu...
IS46LR16640A ISSI-IS46LR16640A Datasheet
1Mb / 43P
Four internal banks for concurrent operation
More results


Descrizione simile - IS46LR16640C

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
Samsung semiconductor
K4X56163PE SAMSUNG-K4X56163PE Datasheet
698Kb / 48P
16M x16 Mobile DDR SDRAM
K4X51163PC SAMSUNG-K4X51163PC Datasheet
217Kb / 23P
32M x16 Mobile-DDR SDRAM
K4X56323PG SAMSUNG-K4X56323PG Datasheet
242Kb / 23P
8M x32 Mobile-DDR SDRAM
K4X51323PC-7E SAMSUNG-K4X51323PC-7E Datasheet
246Kb / 25P
16M x32 Mobile-DDR SDRAM
K4X56163PG SAMSUNG-K4X56163PG Datasheet
217Kb / 23P
16M x16 Mobile-DDR SDRAM
logo
Hynix Semiconductor
H55S1G62MFP-60 HYNIX-H55S1G62MFP-60 Datasheet
711Kb / 53P
1Gb (64Mx16bit) Mobile SDRAM
logo
Integrated Silicon Solu...
IS43DR81280 ISSI-IS43DR81280 Datasheet
863Kb / 28P
1Gb (x8, x16) DDR2 SDRAM
IS43DR81280A ISSI-IS43DR81280A Datasheet
855Kb / 28P
1Gb (x8, x16) DDR2 SDRAM
logo
Micron Technology
MT46H32M16LFBF-6ITC MICRON-MT46H32M16LFBF-6ITC Datasheet
3Mb / 96P
512Mb: x16, x32 Mobile Low-Power DDR SDRAM Features
logo
Nanya Technology Corpor...
NT6DM64M16BD NANYA-NT6DM64M16BD Datasheet
3Mb / 81P
Commercial Mobile DDR 1Gb SDRAM
More results




A proposito di Integrated Silicon Solution, Inc


Integrated Silicon Solution, Inc. (ISSI) is a fabless semiconductor company that designs and markets high-performance integrated circuits (ICs) for the automotive, industrial, medical, and communications markets. The company was founded in 1988 and is headquartered in Milpitas, California, USA.

ISSI's product portfolio includes static random access memory (SRAM), dynamic random access memory (DRAM), and analog and mixed-signal ICs. The company specializes in low-power, high-speed SRAMs, and is a leading supplier of DRAMs to the automotive market.

In 2015, ISSI was acquired by China's Uphill Investment Co., Ltd. and became a wholly-owned subsidiary of Uphill Investment.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.




Link URL



Lei ha avuto il aiuto da alldatasheet?  [ DONATE ] 

Di alldatasheet   |   Richest di pubblicita   |   contatti   |   Privacy Policy   |   Collegamento alla scheda tecnica    |   scambio Link   |   Ricerca produttore
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com