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IS46LR16640C Scheda tecnica(PDF) 1 Page - Integrated Silicon Solution, Inc |
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IS46LR16640C Scheda tecnica(HTML) 1 Page - Integrated Silicon Solution, Inc |
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1 / 47 page ![]() IS43/46LR32320C IS43/46LR16640C 11 Rev. 0A | October 2022 www.issi.com - dram@issi.com 1Gb (x16, x32) Mobile DDR SDRAM Description The IS43/46LR16640C/32320C is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 64Meg words of 16bits or 32Meg words of 32bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a 16-bit or 32-bit bus. The double data rate architecture is essentially a 2 N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 2n-bits prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with LVCMOS. Features • JEDEC standard 1.8V power supply. • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave) • Fully differential clock inputs (CK, /CK) • All inputs except data & DM are sampled at the rising edge of the system clock • Data I/O transaction on both edges of data strobe • Bidirectional data strobe per byte of data (DQS) • DM for write masking only • Edge aligned data & data strobe output • Center aligned data & data strobe input • 64ms refresh period (8K cycle) • Auto & self refresh • Concurrent Auto Precharge • Maximum clock frequency up to 208MHZ • Maximum data rate up to 416Mbps/pin • Power Saving support - PASR (Partial Array Self Refresh) - Auto TCSR (Temperature Compensated Self Refresh) - Deep Power Down Mode - Programmable Driver Strength Control by Full Strength or 1/2, 1/4, 1/8 or 3/4 of Full Strength • Status Register Read (SRR) • LVCMOS compatible inputs/outputs • Operation Temperature: - Commercial (TA= 0 ~ 70 °C ) - Industrial (TA= -40 ~ 85 °C ) - Automotive, A1 (TA= -40 ~ 85 °C ) - Automotive, A2 (TA= -40 ~ 105 °C ) Copyright © 2022 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized; b.) the user assume all such risks; and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Preliminary Information OCTOBER 2022 OPTIONS • Configuration: - 64Mx16 (16M x16 x 4 banks) - 32Mx32 (8M x32 x 4 banks) • Packages: - 60-Ball TFBGA (8x10 mm) for x16 - 90-Ball TFBGA (8x13 mm) for x32 |
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