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ID2006SEC-R1 Scheda tecnica (PDF) - Wuxi Chipown Micro-electronics limited

ID2006SEC-R1 Datasheet PDF - Wuxi Chipown Micro-electronics limited
Il numero della parte ID2006SEC-R1
Scarica  ID2006SEC-R1 Scarica
Grandezza file   570.42 Kbytes
Page   7 Pages
Produttore elettronici  CHIPOWN [Wuxi Chipown Micro-electronics limited]
Homepage  https://www.chipown.com.cn/en/index.html
Logo CHIPOWN - Wuxi Chipown Micro-electronics limited
Spiegazioni elettronici High-Side & Low-Side Gate Drive IC

ID2006SEC-R1 Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
ID2006SEC-R1 Datasheet PDF - Wuxi Chipown Micro-electronics limited

Il numero della parte ID2006SEC-R1
Scarica  ID2006SEC-R1 Click to download

Grandezza file   570.42 Kbytes
Page   7 Pages
Produttore elettronici  CHIPOWN [Wuxi Chipown Micro-electronics limited]
Homepage  https://www.chipown.com.cn/en/index.html
Logo CHIPOWN - Wuxi Chipown Micro-electronics limited
Spiegazioni elettronici High-Side & Low-Side Gate Drive IC

ID2006SEC-R1 Scheda tecnica (HTML) - Wuxi Chipown Micro-electronics limited


ID2006SEC-R1 Dettagli del prodotto

General description
The ID2006 is a high voltage, high speed power MOSFET
driver with independent high and low side referenced output
channels based on P_SUB P_EPI process. The floating
channel can be used to drive an N-channel power MOSFET
in the high side configuration which operates up to 200 V.
Logic inputs are compatible with standard CMOS or LSTTL
output, down to 3.3V logic. The output drivers feature a high
pulse current buffer stage designed for minimum driver
cross-conduction.

Application
 Small and medium- power motor driver
 Power MOSFETS driver
 Half−Bridge Power Converters
 Full-Bridge Power Converters
 Any Complementary Drive Converters

Features
 Fully operational to+200 V
 3.3V and 5V input logic compatible
 dV/dt Immunity ±50 V/nsec
 Gate drive supply range from 6 V to 18 V
 Typically Source / Sink current capability 1 A/1 A
 Typically -9V negative Vs bias capability




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