RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.

• Typical Performance at 945 MHz, 28 Volts
   Output Power — 45 Watts PEP
   Power Gain — 19 dB
   Efficiency — 41% (Two Tones)
   IMD — -31 dBc
• Integrated ESD Protection
• Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz,
   45 Watts CW Output Power

Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Dual-Lead Boltdown Plastic Package Can Also Be Used As Surface Mount.
• 200C Capable Plastic Package
• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
• TO-270-2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.