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SST34HF1621 Scheda tecnica (PDF) - Silicon Storage Technology, Inc

SST34HF1621 Datasheet PDF - Silicon Storage Technology, Inc
Il numero della parte SST34HF1621
Scarica  SST34HF1621 Scarica
Grandezza file   486.7 Kbytes
Page   32 Pages
Produttore elettronici  SST [Silicon Storage Technology, Inc]
Homepage  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc
Spiegazioni elettronici 16 Mbit Concurrent SuperFlash 2 / 4 Mbit SRAM ComboMemory

SST34HF1621 Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
SST34HF1621 Datasheet PDF - Silicon Storage Technology, Inc

Il numero della parte SST34HF1621
Scarica  SST34HF1621 Click to download

Grandezza file   486.7 Kbytes
Page   32 Pages
Produttore elettronici  SST [Silicon Storage Technology, Inc]
Homepage  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc
Spiegazioni elettronici 16 Mbit Concurrent SuperFlash 2 / 4 Mbit SRAM ComboMemory

SST34HF1621 Scheda tecnica (HTML) - Silicon Storage Technology, Inc


SST34HF1621 Dettagli del prodotto

PRODUCT DESCRIPTION
The SST34HF1621/1641 ComboMemory devices integrate a 1M x16 CMOS flash memory bank with a 256K x8/128K x16 or 512K x8/ 256K x16 CMOS SRAM memory bank in a Multi-Chip Package (MCP). These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick oxide tunneling injector to attain better reliability and manufacturability compared with alternate approaches. The SST34HF1621/1641 devices are ideal for applications such as cellular phones, GPSs, PDAs and other portable electronic devices in a low power and small form factor system.

FEATURES:
• Flash Organization: 1M x16
• Dual-Bank Architecture for Concurrent Read/Write Operation
    – 16 Mbit: 12 Mbit + 4 Mbit
• SRAM Organization:
    – 2 Mbit: 256K x8 or 128K x16
    – 4 Mbit: 512K x8 or 256K x16
• Single 2.7-3.3V Read and Write Operations
• Superior Reliability
    – Endurance: 100,000 Cycles (typical)
    – Greater than 100 years Data Retention
• Low Power Consumption:
    – Active Current: 25 mA (typical)
    – Standby Current: 20 µA (typical)
• Hardware Sector Protection (WP#)
    – Protects 4 outer most sectors (4 KWord) in the larger bank by holding WP# low and unprotects by holding WP# high
• Hardware Reset Pin (RST#)
    – Resets the internal state machine to reading data array
• Sector-Erase Capability
    – Uniform 1 KWord sectors
• Block-Erase Capability
    – Uniform 32 KWord blocks
• Read Access Time
    – Flash: 70 and 90 ns
    – SRAM: 70 and 90 ns
• Latched Address and Data
• Fast Erase and Word-Program:
    – Sector-Erase Time: 18 ms (typical)
    – Block-Erase Time: 18 ms (typical)
    – Chip-Erase Time: 70 ms (typical)
    – Word-Program Time: 14 µs (typical)
    – Chip Rewrite Time: 8 seconds (typical)
• Automatic Write Timing
    – Internal VPP Generation
• End-of-Write Detection
    – Toggle Bit
    – Data# Polling
    – Ready/Busy# pin
• CMOS I/O Compatibility
• JEDEC Standard Command Set
• Conforms to Common Flash Memory Interface (CFI)
• Packages Available
    – 56-ball LFBGA (8mm x 10mm)




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A proposito di Silicon Storage Technology, Inc


Silicon Storage Technology, Inc. (SST) era una società tecnologica americana specializzata nella progettazione e produzione di soluzioni di memoria non volatili, tra cui memoria flash e microcontrollori.
La compagnia è stata fondata nel 1991 e ha avuto il suo quartier generale a Sunnyvale, in California.
SST era noto per la sua tecnologia innovativa e i prodotti di alta qualità e aveva una forte reputazione nel settore della memoria e dello stoccaggio.
Nel 2010, SST è stato acquisito da Microchip Technology Inc., un fornitore leader di microcontrollore e semiconduttori analogici.
Oggi, SST opera come una consociata di microchip e continua a fornire soluzioni di memoria non volatili per una varietà di applicazioni.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.




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