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SST36VF1601 Scheda tecnica (PDF) - Silicon Storage Technology, Inc

SST36VF1601 Datasheet PDF - Silicon Storage Technology, Inc
Il numero della parte SST36VF1601
Scarica  SST36VF1601 Scarica
Grandezza file   404.98 Kbytes
Page   26 Pages
Produttore elettronici  SST [Silicon Storage Technology, Inc]
Homepage  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc
Spiegazioni elettronici 16 Mbit Concurrent SuperFlash

SST36VF1601 Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
SST36VF1601 Datasheet PDF - Silicon Storage Technology, Inc

Il numero della parte SST36VF1601
Scarica  SST36VF1601 Click to download

Grandezza file   404.98 Kbytes
Page   26 Pages
Produttore elettronici  SST [Silicon Storage Technology, Inc]
Homepage  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc
Spiegazioni elettronici 16 Mbit Concurrent SuperFlash

SST36VF1601 Scheda tecnica (HTML) - Silicon Storage Technology, Inc


SST36VF1601 Dettagli del prodotto

PRODUCT DESCRIPTION
The SST36VF1601/1602 are 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.The SST36VF1601/ 1602 write (Program or Erase) with a 2.7-3.6V power supply. The SST36VF1601/1602 devices conform to JEDEC standard pinouts for x16 memories.
   
FEATURES:
• Organized as 1M x16
• Dual-Bank Architecture for Concurrent
    Read/Write Operation
    – 16 Mbit Bottom Sector Protection
    - SST36VF1601: 12 Mbit + 4 Mbit
    – 16 Mbit Top Sector Protection
    - SST36VF1602: 4 Mbit + 12 Mbit
• Single 2.7-3.6V Read and Write Operations
• Superior Reliability
    – Endurance: 100,000 Cycles (typical)
    – Greater than 100 years Data Retention
• Low Power Consumption:
    – Active Current: 25 mA (typical)
    – Standby Current: 4 µA (typical)
    – Auto Low Power Mode: 4 µA (typical)
• Hardware Sector Protection/WP# Input Pin
    – Protects 4 outer most sectors (4 KWord) in the
        larger bank by driving WP# low and unprotects
        by driving WP# high
• Hardware Reset Pin (RESET#)
    – Resets the internal state machine to reading
        data array
• Sector-Erase Capability
    – Uniform 1 KWord sectors
• Block-Erase Capability
    – Uniform 32 KWord blocks
• Read Access Time
    – 70 and 90 ns
• Latched Address and Data
• Fast Erase and Word-Program:
    – Sector-Erase Time: 18 ms (typical)
    – Block-Erase Time: 18 ms (typical)
    – Chip-Erase Time: 70 ms (typical)
    – Word-Program Time: 14 µs (typical)
    – Chip Rewrite Time: 8 seconds (typical)
• Automatic Write Timing
    – Internal VPP Generation
• End-of-Write Detection
    – Toggle Bit
    – Data# Polling
    – Ready/Busy# pin
• CMOS I/O Compatibility
• Conforms to Common Flash Memory
    Interface (CFI)
• JEDEC Standards
    – Flash EEPROM Pinouts and command sets
• Packages Available
    – 48-Pin TSOP (12mm x 20mm)
    – 48-Ball TFBGA (8mm x 10mm)
   




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A proposito di Silicon Storage Technology, Inc


Silicon Storage Technology, Inc. (SST) era una società tecnologica americana specializzata nella progettazione e produzione di soluzioni di memoria non volatili, tra cui memoria flash e microcontrollori.
La compagnia è stata fondata nel 1991 e ha avuto il suo quartier generale a Sunnyvale, in California.
SST era noto per la sua tecnologia innovativa e i prodotti di alta qualità e aveva una forte reputazione nel settore della memoria e dello stoccaggio.
Nel 2010, SST è stato acquisito da Microchip Technology Inc., un fornitore leader di microcontrollore e semiconduttori analogici.
Oggi, SST opera come una consociata di microchip e continua a fornire soluzioni di memoria non volatili per una varietà di applicazioni.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.




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