The GP800DDS12 is a dual switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry.

FEATURES
■ n - Channel
■ Enhancement Mode
■ High Input Impedance
■ Optimised For High Power High Frequency Operation
■ Isolated Base
■ Full 1200V Capability
■ 800A Per Arm

APPLICATIONS
■ High Power Switching
■ Motor Control
■ Inverters
■ Traction Systems