| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
 California Eastern Labs |
NX5315EH
|
283Kb / 7P |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
 NEC |
NX5323EH
|
89Kb / 7P |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
 Renesas Technology Corp |
NX6308GH
|
221Kb / 9P |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
|
|
NX6309GH
|
221Kb / 9P |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
|
 California Eastern Labs |
NX5522
|
185Kb / 7P |
1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
|
|
NX5323EH
|
173Kb / 7P |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
|
NX5317
|
338Kb / 9P |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
 Renesas Technology Corp |
NX6308GH
|
221Kb / 9P |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
|
|
NX6309GH
|
221Kb / 9P |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
|
|
PL10692EJ03V0DS
|
221Kb / 9P |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
|