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HS-4423RH Scheda tecnica (PDF) - Intersil Corporation

HS-4423RH Datasheet PDF - Intersil Corporation
Il numero della parte HS-4423RH
Scarica  HS-4423RH Scarica
Grandezza file   201.96 Kbytes
Page   3 Pages
Produttore elettronici  INTERSIL [Intersil Corporation]
Homepage  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation
Spiegazioni elettronici Radiation Hardened Dual, Inverting Power MOSFET Drivers

HS-4423RH Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
HS-4423RH Datasheet PDF - Intersil Corporation

Il numero della parte HS-4423RH
Scarica  HS-4423RH Click to download

Grandezza file   201.96 Kbytes
Page   3 Pages
Produttore elettronici  INTERSIL [Intersil Corporation]
Homepage  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation
Spiegazioni elettronici Radiation Hardened Dual, Inverting Power MOSFET Drivers

HS-4423RH Scheda tecnica (HTML) - Intersil Corporation


HS-4423RH Dettagli del prodotto

The Radiation Hardened HS-4423RH, HS-4423EH,
HS-4423BRH, HS-4423BEH are inverting, dual, monolithic
high-speed MOSFET drivers designed to convert TTL level
signals into high current outputs at voltages up to 18V.
The inputs of these devices are TTL compatible and can be
directly driven by our HS-1825ARH PWM device or by our
ACS/ACTS and HCS/HCTS type logic devices. The fast rise
times and high current outputs allow very quick control of high
gate capacitance power MOSFETs in high frequency
applications.
The high current outputs minimize power losses in MOSFETs by
rapidly charging and discharging the gate capacitance. The
output stage incorporates a low voltage lock-out circuit that
puts the outputs into a three-state mode when the supply
voltage drops below 10V for the HS-4423RH, HS-4423EH and
7.5V for the HS-4423BRH and HS-4423BEH.
Constructed with the Intersil dielectrically isolated Rad Hard
Silicon Gate (RSG) BiCMOS process, these devices are immune
to Single Event Latch-up and have been specifically designed
to provide highly reliable performance in harsh radiation
environments

Features
• Electrically screened to DLA SMD # 5962-99511
• QML qualified per MIL-PRF-38535 requirements
• EH version acceptance tested to 50krad(Si) (LDR)
• Radiation environment
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300krad(Si)
- Latch-up immune
- Low dose rate immune
• IPEAK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2A (typ)
• Matched rise and fall times (CL = 4300pF) . . . . . . . . 75ns (max)
• Low voltage lock-out feature
- HS-4423RH, HS-4423EH, . . . . . . . . . . . . . . . . . . . . . <10.0V
- HS-4423BRH, HS-4423BEH . . . . . . . . . . . . . . . . . . . . . <7.5V
• Wide supply voltage range . . . . . . . . . . . . . . . . . . . 12V to 18V
• Prop delay . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .250ns (max)
• Consistent delay times with VCC changes
• Low power consumption
- 40mW with inputs high
- 20mW with inputs low
• Low equivalent input capacitance . . . . . . . . . . . . . 3.2pF (typ)
• ESD protected. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4000V

Applications
• Switching power supplies
• DC/DC converters
• Motor controllers




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A proposito di Intersil Corporation


Intersil Corporation era una società di semiconduttori americani specializzata nella progettazione e nella produzione di circuiti integrati analogici e di segnale misto ad alte prestazioni.
La società è stata fondata nel 1967 ed era nota per la sua esperienza nelle tecnologie di gestione dell'alimentazione, conversione dei dati e radiofrequenza (RF).
I prodotti di Intersil sono stati utilizzati in una vasta gamma di applicazioni come elettronica di consumo, industriali, telecomunicazioni e aerospaziale e difesa.
Nel 2016, Intersil è stato acquisito da Renesas Electronics Corporation, una società di semiconduttori giapponesi.
Il marchio e la tecnologia intersil continuano a essere sviluppati e venduti come parte del portafoglio di prodotti di Renesas.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.




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