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K7M323625M-QC75 Scheda tecnica (PDF) - Samsung semiconductor

K7M323625M-QC75 Datasheet PDF - Samsung semiconductor
Il numero della parte K7M323625M-QC75
Scarica  K7M323625M-QC75 Scarica
Grandezza file   277.09 Kbytes
Page   24 Pages
Produttore elettronici  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Spiegazioni elettronici 1Mx36 & 2Mx18-Bit Pipelined NtRAM

K7M323625M-QC75 Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
K7M323625M-QC75 Datasheet PDF - Samsung semiconductor

Il numero della parte K7M323625M-QC75
Scarica  K7M323625M-QC75 Click to download

Grandezza file   277.09 Kbytes
Page   24 Pages
Produttore elettronici  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Spiegazioni elettronici 1Mx36 & 2Mx18-Bit Pipelined NtRAM

K7M323625M-QC75 Scheda tecnica (HTML) - Samsung semiconductor


K7M323625M-QC75 Dettagli del prodotto

GENERAL DESCRIPTION
The K7N323601M and K7N321801M are 37,748,736-bits Synchronous Static SRAMs.
The NtRAMTM, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles.
Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock.

FEATURES
• 3.3V+0.165V/-0.165V Power Supply.
• I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
• Byte Writable Function.
• Enable clock and suspend operation.
• Single READ/WRITE control pin.
• Self-Timed Write Cycle.
• Three Chip Enable for simple depth expansion with no data-contention .
• A interleaved burst or a linear burst mode.
• Asynchronous output enable control.
• Power Down mode.
• 100-TQFP-1420A .
• 165FBGA(11x15 ball aray) with body size of 15mmx17mm.




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