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KM718V089 Scheda tecnica (PDF) - Samsung semiconductor

KM718V089 Datasheet PDF - Samsung semiconductor
Il numero della parte KM718V089
Scarica  KM718V089 Scarica
Grandezza file   536.54 Kbytes
Page   20 Pages
Produttore elettronici  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Spiegazioni elettronici 512Kx36 & 1Mx18 Synchronous SRAM

KM718V089 Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
KM718V089 Datasheet PDF - Samsung semiconductor

Il numero della parte KM718V089
Scarica  KM718V089 Click to download

Grandezza file   536.54 Kbytes
Page   20 Pages
Produttore elettronici  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Spiegazioni elettronici 512Kx36 & 1Mx18 Synchronous SRAM

KM718V089 Scheda tecnica (HTML) - Samsung semiconductor


KM718V089 Dettagli del prodotto

GENERAL DESCRIPTION
The KM736V989 and KM718V089 are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

FEATURES
• Synchronous Operation.
• 2 Stage Pipelined operation with 4 Burst.
• On-Chip Address Counter.
• Self-Timed Write Cycle.
• On-Chip Address and Control Registers.
• VDD= 3.3V +0.165V/-0.165V Power Supply.
• I/O Supply Voltage 3.3V +0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
• 5V Tolerant Inputs Except I/O Pins.
• Byte Writable Function.
• Global Write Enable Controls a full bus-width write.
• Power Down State via ZZ Signal.
• LBO Pin allows a choice of either a interleaved burst or a linear burst.
• Three Chip Enables for simple depth expansion with No Data Contention only for TQFP ; 2cycle Enable, 1cycle Disable.
• Asynchronous Output Enable Control.
• ADSP, ADSC, ADV Burst Control Pins.
• TTL-Level Three-State Output.
• 100-TQFP-1420A / 119BGA(7x17 Ball Grid Array Package)




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