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KM718V887 Scheda tecnica (PDF) - Samsung semiconductor

KM718V887 Datasheet PDF - Samsung semiconductor
Il numero della parte KM718V887
Scarica  KM718V887 Scarica
Grandezza file   470.96 Kbytes
Page   16 Pages
Produttore elettronici  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Spiegazioni elettronici 256Kx18 Synchronous SRAM

KM718V887 Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
KM718V887 Datasheet PDF - Samsung semiconductor

Il numero della parte KM718V887
Scarica  KM718V887 Click to download

Grandezza file   470.96 Kbytes
Page   16 Pages
Produttore elettronici  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Spiegazioni elettronici 256Kx18 Synchronous SRAM

KM718V887 Scheda tecnica (HTML) - Samsung semiconductor


KM718V887 Dettagli del prodotto

GENERAL DESCRIPTION
The KM718V887 is a 4,718,592 bit Synchronous Static Random Access Memory designed for support zero wait state performance for advanced Pentium/Power PC address pipelining. And with CS1 high, ADSP is blocked to control signal.

FEATURES
• Synchronous Operation.
• On-Chip Address Counter.
• Write Self-Timed Cycle.
• On-Chip Address and Control Registers.
• VDD= 3.3V+0.3V/-0.165V Power Supply.
• VDDQ Supply Voltage 3.3V+0.3V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
• 5V Tolerant Inputs except I/O Pins.
• Byte Writable Function.
• Global Write Enable Controls a full bus-width write.
• Power Down State via ZZ Signal.
• Asynchronous Output Enable Control.
• ADSP, ADSC, ADV Burst Control Pins.
• LBO Pin allows a choice of either a interleaved burst or a linear burst.
• Three Chip Enables for simple depth expansion with No Data Contention.
• TTL-Level Three-State Output.
• 100-TQFP-1420A




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