GT20J321 Scheda tecnica(PDF) - Toshiba Semiconductor

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GT20J321 Scheda tecnica (PDF) - Toshiba Semiconductor

GT20J321 Datasheet PDF - Toshiba Semiconductor


Il numero della parte	GT20J321

Scarica	GT20J321 Scarica

Grandezza file	329.82 Kbytes

Page	7 Pages

Produttore elettronici	TOSHIBA [Toshiba Semiconductor]

Homepage	http://www.semicon.toshiba.co.jp/eng

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Spiegazioni elettronici

High Power Switching Applications Fast Switching Applications

GT20J321 Datasheet (PDF)

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Scarica Scheda tecnica

GT20J321 Datasheet PDF - Toshiba Semiconductor


Il numero della parte	GT20J321

Scarica	GT20J321 Click to download

Grandezza file	329.82 Kbytes

Page	7 Pages

Produttore elettronici	TOSHIBA [Toshiba Semiconductor]

Homepage	http://www.semicon.toshiba.co.jp/eng

Logo

Spiegazioni elettronici	High Power Switching Applications Fast Switching Applications

GT20J321 Scheda tecnica (HTML) - Toshiba Semiconductor

GT20J321 Datasheet HTML 1Page - Toshiba Semiconductor

GT20J321 Datasheet HTML 2Page - Toshiba Semiconductor

GT20J321 Datasheet HTML 3Page - Toshiba Semiconductor

GT20J321 Datasheet HTML 4Page - Toshiba Semiconductor

GT20J321 Datasheet HTML 5Page - Toshiba Semiconductor

GT20J321 Datasheet HTML 6Page - Toshiba Semiconductor

GT20J321 Datasheet HTML 7Page - Toshiba Semiconductor

GT20J321 Dettagli del prodotto

High Power Switching Applications

Fast Switching Applications

• Fourth-generation IGBT

• Enhancement mode type

• Fast switching (FS): Operating frequency up to 50 kHz (reference)

   High speed: tf = 0.04 μs (typ.)

   Low switching loss : Eon = 0.40 mJ (typ.)

                            : Eoff = 0.43 mJ (typ.)

• Low saturation voltage: VCE (sat) = 2.0 V (typ.)

• FRD included between emitter and collector

Codice articolo simile - GT20J321

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Toshiba Semiconductor	GT20J321	197Kb / 7P	Silicon N Channel IGBT High Power Switching Applications
	GT20J321	1Mb / 73P	Bipolar Small-Signal Transistors
	GT20J321	197Kb / 7P	Silicon N Channel IGBT High Power Switching Applications

Descrizione simile - GT20J321

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Toshiba Semiconductor	GT15J321	311Kb / 7P	High Power Switching Applications Fast Switching Applications
Unisonic Technologies	UBV45	48Kb / 4P	HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS
Toshiba Semiconductor	MP4005	208Kb / 8P	High Power Switching Applications
Comset Semiconductor	2N5671	323Kb / 3P	HIGH CURRENT FAST SWITCHING APPLICATIONS
Unisonic Technologies	UBV45	164Kb / 4P	HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS
Comset Semiconductor	2N5671	128Kb / 4P	HIGH CURRENT FAST SWITCHING APPLICATIONS
Toshiba Semiconductor	GT30J126	194Kb / 6P	High Power Switching Applications Fast Switching Applications
Unisonic Technologies	13002AG	121Kb / 4P	HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS
	UBV45	164Kb / 4P	HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS
	13002AG	115Kb / 3P	HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS

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