| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
 Toshiba Semiconductor |
GT20J321
|
329Kb/7P
|
High Power Switching Applications Fast Switching Applications
|
|
GT20J321
|
197Kb/7P
|
Silicon N Channel IGBT High Power Switching Applications
|
|
GT20J321
|
1Mb/73P
|
Bipolar Small-Signal Transistors
|
|
GT20J321
|
197Kb/7P
|
Silicon N Channel IGBT High Power Switching Applications
|
| Search Partnumber :
Start with "GT20J321" -
Total : 108 ( 1/6 Page) |
 Toshiba Semiconductor |
GT20J321
|
197Kb/7P |
Silicon N Channel IGBT High Power Switching Applications
|
|
GT20J301
|
325Kb/6P |
N CHANNEL (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
|
GT20J301
|
491Kb/7P |
SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
|
|
GT20J301
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
|
GT20J301
|
491Kb/7P |
SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
|
|
GT20J311
|
322Kb/6P |
N CHANNEL (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
|
GT20J311
|
835Kb/16P |
Discrete IGBTs
|
|
GT20J341
|
251Kb/10P |
Discrete IGBTs Silicon N-Channel IGBT
|
|
GT20J101
|
259Kb/6P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
|
GT20J101
|
191Kb/6P |
Silicon N Channel IGBT High Power Switching Applications
|
|
GT20J101
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
|
GT20J101
|
191Kb/6P |
Silicon N Channel IGBT High Power Switching Applications
|
|
GT20J121
|
195Kb/7P |
Discrete IGBTs Silicon N-Channel IGBT
|
 Jewel Hill Electronic |
GT2001
|
384Kb/25P |
SPECIFICATIONS FOR LCD MODULE
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GT2001HWDMNRNP-V00-NOCX
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384Kb/25P |
SPECIFICATIONS FOR LCD MODULE
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GT2001HWDMPRNP-V00-NOCX
|
384Kb/25P |
SPECIFICATIONS FOR LCD MODULE
|