| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
STMicroelectronics |
SCTW40N120G2V
|
205Kb / 12P |
Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247 package
09-Jun-2021 |
|
SCTW100N120G2AG
|
217Kb / 11P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A,30 mΩ (typ., TJ=25 °C), in an HiP247 package
23-Jul-2020 |
|
SCTW35N65G2VAG
|
206Kb / 12P |
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package
09-Sep-2020 |
|
SCTW60N120G2AG
|
197Kb / 11P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package
18-May-2020 |
|
SCTWA40N120G2AG
|
257Kb / 12P |
Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads package
22-Nov-2021 |
|
SCTWA60N120G2AG
|
242Kb / 12P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package
16-Dec-2020 |
|
SCT025H120G3AG
|
369Kb / 14P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 55 A in an H²PAK-7 package
28-Nov-2022 |
|
SCT040H120G3AG
|
386Kb / 14P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package
14-Oct-2022 |
|
SCT040H65G3AG
|
389Kb / 14P |
Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package
21-Jan-2022 |
|
SCT10N120AG
|
238Kb / 14P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package
21-Sep-2022 |
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