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© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Preliminary data sheet

Rev. 01 — 27 May 2004

2 of 8

Philips Semiconductors

BAP142L

Silicon PIN diode

4.

Marking

5.

Limiting values

6.

Thermal characteristics

7.

Characteristics

Table 3:

Marking

Type number

Marking code

BAP142L

E1

Table 4:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

continuous reverse voltage

-

50

V

continuous forward current

-

100

mA

total power dissipation

-

315

mW

storage temperature

−65

+150

°C

junction temperature

−65

+150

°C

Table 5:

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

thermal resistance from junction

to soldering point

190

K/W

Table 6:

Electrical characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

forward voltage

-

0.95

1.1

V

reverse current

-

-

100

nA

--20

nA

diode capacitance

f = 1 MHz; see Figure 2

-

0.26

-

pF

-

0.23

0.35

pF

-

0.17

0.25

pF

diode forward resistance

f = 100 MHz; see Figure 1

-

3.3

5.0

Ω

-

2.4

3.6

Ω

-

1.0

1.5

Ω

-

0.6

0.9

Ω