BAP142L datasheet(3/8 Pages) PHILIPS

3 / 8 page

9397 750 13056

Preliminary data sheet

Rev. 01 — 27 May 2004

3 of 8

Philips Semiconductors

BAP142L

Silicon PIN diode

s

21

isolation

VR = 0 V; see Figure 4

f = 900 MHz

16.0

f = 1800 MHz

11.6

f = 2450 MHz

9.9

s212

insertion loss

IF = 0.5 mA; see Figure 3

f = 900 MHz

0.24

f = 1800 MHz

0.25

f = 2450 MHz

0.26

s212

insertion loss

IF = 1 mA; see Figure 3

f = 900 MHz

0.18

f = 1800 MHz

0.19

f = 2450 MHz

0.21

s212

insertion loss

IF = 10 mA; see Figure 3

f = 900 MHz

0.10

f = 1800 MHz

0.11

f = 2450 MHz

0.14

s212

insertion loss

IF = 100 mA; see Figure 3

f = 900 MHz

0.07

f = 1800 MHz

0.09

f = 2450 MHz

0.11

τL

charge carrier life time

when switched from

IF =10mAtoIR = 6 mA;

RL = 100 Ω;

measured at IR =3mA

0.12

µs

series inductance

IF = 100 mA; f = 100 MHz

0.6

Table 6:

Electrical characteristics …continued

Tj = 25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

BAP142L Scheda tecnica(PDF) 3 Page - NXP Semiconductors

BAP142L Scheda tecnica(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8

Scheda tecnica Scarica

Link URL