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BFG540 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BFG540 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN RF Transistor BFG540/X ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 15 V ICBO Collector Cutoff Current VCB= 8V; IE= 0 0.05 μ A hFE DC Current Gain IC=40mA ; VCE= 8V 60 250 fT Current-Gain—Bandwidth Product IC= 40mA ; VCE= 8V; f= 1MHz 9 GHz Cre Feedback Capacitance IE= 0 ; VCB= 8V; f= 1MHz 0.5 pF Ce Emitter capacitance IC=iC=0,VEB=0.5V,f=1MHz 2.0 pF CC Collector capacitance IE=ie=0,VCB=8V,f=1MHz 0.9 pF ︱ S21︱2 Insertion Power Gain IC= 40mA ; VCE= 8V; f= 900MHz 15 16 dB NF Noise Figure IC= 10mA ; VCE= 8V; f= 900MHz 1.3 1.8 dB IC= 40mA ; VCE= 8V; f= 900MHz 1.9 2.4 IC= 10mA ; VCE= 8V; f= 2GHz 2.1 |
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