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BFG540 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BFG540 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN RF Transistor BFG540/X DESCRIPTION · Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz · High Gain ︱ S21︱2 =16dB TYP. @VCE= 8 V,IC = 40 mA,f = 900 MHz · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 2.5 V IC Collector Current-Continuous 120 mA PC Collector Power Dissipation @TC=25℃ 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ |
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