PE6R8DX datasheet(1/5 Pages) NIKOSEM

Il numero della parte	PE6R8DX

Spiegazioni elettronici	Dual N-Channel Enhancement Mode Field Effect Transistor

PDF	5 Pages

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Produttore elettronici	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Homepage	http://www.niko-sem.com

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REV1.0

1

I-46-2

Dual N-Channel Enhancement Mode

Field Effect Transistor

PE6R8DX

PDFN 3x3P

Halogen-Free & Lead-Free

NIKO-SEM

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

40V

15.5mΩ

24A

D1 D1 D2 D2

S1 G1 S2 G2

#1

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low R

DS(on) to Minimize Conduction Losses.

• Ohmic Region Good R

DS(on) Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

Applications

• Protection Circuits Applications.

• Protable Devices for Battery PACK Applications.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

40

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

TC = 25 °C

ID

24

A

TC = 100 °C

15

TA = 25 °C

6

TA = 70 °C

4.8

Pulsed Drain Current

1

IDM

45

Avalanche Current

IAS

21

Avalanche Energy

L = 0.1mH

EAS

22

mJ

Power Dissipation

TC = 25 °C

PD

28

W

TC = 100 °C

11

TA = 25 °C

1.7

TA = 70 °C

1

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient

2

RJA

75

°C / W

Junction-to-Case

RJC

4.5

1Pulse width limited by maximum junction temperature.

2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air

environment with TA =25°C

G : GATE

D : DRAIN

S : SOURCE

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