PE6R8DX datasheet(2/5 Pages) NIKOSEM

2 / 5 page

REV1.0

I-46-2

Dual N-Channel Enhancement Mode

Field Effect Transistor

PE6R8DX

PDFN 3x3P

Halogen-Free & Lead-Free

NIKO-SEM

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP

MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

1.6

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = 32V, VGS = 0V

A

VDS = 30V, VGS = 0V, TJ = 55 °C

Drain-Source On-State

Resistance

RDS(ON)

VGS = 4.5V, ID = 12A

mΩ

VGS = 10V, ID = 18A

15.5

Forward Transconductance

gfs

VDS = 10V, ID = 18A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = 20V, f = 1MHz

909

Output Capacitance

Coss

116

Reverse Transfer Capacitance

Crss

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

Total Gate Charge

Qg(VGS=10V)

VDS = 20V , ID = 18A

Qg(VGS=4.5V)

Gate-Source Charge

Qgs

2.4

Gate-Drain Charge

Qgd

5.2

Turn-On Delay Time

td(on)

VDD = 0V

ID  18A, VGEN = 10V, RG =6Ω

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

118

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

Forward Voltage

VSD

IF = 18A, VGS = 0V

1.3

Reverse Recovery Time

trr

IF = 18A , dlF/dt = 100A / S

9.2

Reverse Recovery Charge

Qrr

2.9

1Pulse test : Pulse Width

 300 sec, Duty Cycle  2％.

2Independent of operating temperature.

PE6R8DX Scheda tecnica(PDF) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

PE6R8DX Scheda tecnica(HTML) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

Html Pages

1 2 3 4 5

Scheda tecnica Scarica

Link URL