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SLP840C Scheda tecnica(PDF) 1 Page - Shenzhen Meipusen Semiconductor Co., Ltd |
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SLP840C Scheda tecnica(HTML) 1 Page - Shenzhen Meipusen Semiconductor Co., Ltd |
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1 / 7 page  Maple Semiconductor CO., LTD http://www.maplesemi.com Rev. 00 January. 2015 SLP840C / SLF840C 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 8A, 500V, R DS(on)typ. = 0.64Ω@VGS = 10 V - Low gate charge ( typical 31.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted Symbol Parameter SLP840C SLF840C Units V DSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25℃) 8.0 8.0 * A - Continuous (TC = 100℃) 4.8 4.8 * A IDM Drain Current - Pulsed (Note 1) 32 32 * A VGSS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 285 mJ IAR Avalanche Current (Note 1) 8 A EAR Repetitive Avalanche Energy (Note 1) 12.28 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25℃) 123 36 W - Derate above 25℃ 0.98 0.28 W/℃ TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ TL Maximum lead temperature for soldering purposes, 300 ℃ 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter SLP840C SLF840C Units R θJC Thermal Resistance, Junction-to-Case 1.02 3.52 ℃/W R θJS Thermal Resistance, Case-to-Sink Typ. 0.5 -- ℃/W R θJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 ℃/W * Drain current limited by maximum junction temperature. G S D G D S G D S TO-220 TO-220F |
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