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SLP840C Scheda tecnica(PDF) 2 Page - Shenzhen Meipusen Semiconductor Co., Ltd |
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SLP840C Scheda tecnica(HTML) 2 Page - Shenzhen Meipusen Semiconductor Co., Ltd |
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2 / 7 page ![]() Maple Semiconductor CO., LTD http://www.maplesemi.com Rev. 00 January. 2015 Electrical Characteristics T C = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 uA 500 -- -- V △BVDSS / △TJ Breakdown Voltage Temperature Coefficient ID = 250 uA, Referenced to 25℃ -- 0.5 -- V/℃ IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- -- 1 uA VDS = 400 V, TC = 125℃ -- -- 10 uA IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 uA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 4 A -- 0.64 0.77 Ω gFS Forward Transconductance VDS = 40 V, ID = 4 A (Note 4) -- 5 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1271 -- pF Coss Output Capacitance -- 143 -- pF Crss Reverse Transfer Capacitance -- 1 -- pF Switching Characteristics td(on) Turn-On Delay Time VDD = 250 V, ID = 8 A, RG = 25 Ω (Note 4, 5) -- 27.5 -- ns tr Turn-On Rise Time -- 25 -- ns td(off) Turn-Off Delay Time -- 127.5 -- ns tf Turn-Off Fall Time -- 35.5 -- ns Qg Total Gate Charge VDS = 400 V, ID = 8 A, VGS = 10 V (Note 4, 5) -- 31.5 -- nC Qgs Gate-Source Charge -- 12 -- nC Qgd Gate-Drain Charge -- 6.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 8 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 32 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 8 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 8 A, -- 567.5 -- ns Qrr Reverse Recovery Charge dIF / dt = 100 A/us (Note 4) -- 4 -- uC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 8.3mH, I AS = 8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. I SD £ 8A, di/dt £ 100A/us, VDD £ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width £ 300us, Duty cycle £ 2% 5. Essentially independent of operating temperature |
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