GD25LB128DSJS datasheet(21/75 Pages) GIGADEVICE

21 / 75 page

1.8V Uniform Sector

Dual and Quad Serial Flash

GD25LB128D

Figure5b. Read Status Register Sequence Diagram (QPI) (15H)

CS#

SCLK

IO0

IO1

IO2

IO3

Command

15H

S1-S0 out

7.5. Write Status Register (WRSR) (01H)

The Write Status Register (WRSR) command allows new values to be written to the Status Register. Before it can be

accepted, a Write Enable (WREN) command must previously have been executed. After the Write Enable (WREN)

command has been decoded and executed, the device sets the Write Enable Latch (WEL).

The Write Status Register (WRSR) command has no effect on S15, S10, S1 and S0 of the Status Register. CS# must

be driven high after the eighth or sixteen bit of the data byte has been latched in. If not, the Write Status Register (WRSR)

command is not executed. If CS# is driven high after eighth bit of the data byte, the CMP bit will be cleared to 0 in SPI mode,

while only CMP will be cleared to 0 in QPI mode. As soon as CS# is driven high, the self-timed Write Status Register cycle

(whose duration is tW) is initiated. While the Write Status Register cycle is in progress, the Status Register may still be read

to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Write Status

The Write Status Register (WRSR) command allows the user to change the values of the Block Protect (BP4, BP3,

BP2, BP1, and BP0) bits, to define the size of the area that is to be treated as read-only, as defined in Table1.

Figure6. Write Status Register Sequence Diagram

Command

01H

CS#

SCLK

High-Z

9 10 11 12 13 14 15

MSB

Status Register in

16 17 18 19 20 21 22 23

15 14 13 12 11 10 9

GD25LB128DSJS Scheda tecnica(PDF) 21 Page - GigaDevice Semiconductor (Beijing) Inc.