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GD25LH40C Scheda tecnica(PDF) 49 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25LH40C Scheda tecnica(HTML) 49 Page - GigaDevice Semiconductor (Beijing) Inc. |
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49 / 69 page ![]() 1.8V Uniform Sector Dual and Quad Serial Flash GD25LH40C/20C/10C/05C 49 8 ELECTRICAL CHARACTERISTICS 8.1 POWER-ON TIMING Figure37. Power-On Timing Sequence Diagram Vcc(max) Vcc(min) VWI tVSL Chip Selection is not allowed Device is fully accessible Time Table 9. Power-Up Timing and Write Inhibit Threshold Symbol Parameter Min. Max. Unit tVSL VCC (min) To CS# Low 1.8 ms VWI Write Inhibit Voltage VCC (min) 1 1.4 V 8.2 Initial Delivery State The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFH).The Status Register contains 00H (all Status Register bits are 0). 8.3 Absolute Maximum Ratings Parameter Value Unit Ambient Operating Temperature -40 to 85 ℃ Storage Temperature -65 to 150 ℃ Transient Input/Output Voltage (note: overshoot) -2.0 to VCC+2.0 V Applied Input/Output Voltage -0.6 to VCC+0.5 V VCC -0.6 to 2.5 V Figure38. Absolute Maximum Ratings Diagram Vss 20ns Maximum Negative Overshoot Waveform Maximum Positive Overshoot Waveform 20ns 20ns Vss-2.0V Vcc 20ns 20ns 20ns Vcc + 2.0V |
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