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ADRF5730BCCZN-R7 Scheda tecnica(PDF) 6 Page - Analog Devices

Il numero della parte ADRF5730BCCZN-R7
Spiegazioni elettronici  Silicon Digital Attenuator
PDF  19 Pages
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Produttore elettronici  AD [Analog Devices]
Homepage  http://www.analog.com
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ADRF5730BCCZN-R7 Scheda tecnica(HTML) 6 Page - Analog Devices

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ADRF5730
Data Sheet
Rev. 0 | Page 6 of 19
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Rating
Positive Supply Voltage
−0.3 V to +3.6 V
Negative Supply Voltage
−3.6 V to +0.3 V
Digital Control Input Voltage
−0.3 V to VDD + 0.3 V
RF Input Power1 (f = 100 MHz to
30 GHz, TCASE = 85°C2)
ATTIN
Steady State Average
28 dBm
Steady State Peak
31 dBm
Hot Switching Average
25 dBm
Hot Switching Peak
28 dBm
ATTOUT
Steady State Average
19 dBm
Steady State Peak
22 dBm
Hot Switching Average
16 dBm
Hot Switching Peak
19 dBm
Temperature
Junction (TJ)
135°C
Storage
−65°C to +150°C
Reflow
260°C
Continuous Power Dissipation (PDISS)
0.5 W
ESD Sensitivity
Human Body Model (HBM)
ATTIN and ATTOUT Pins
500 V
Digital Pins
2000 V
Charged Device Model (CDM)
1250 V
1
For power derating over frequency, see Figure 2 and Figure 3. Applicable for
all ATTIN and ATTOUT power specifications.
2
For 105°C operation, the power handling degrades from the TCASE = 85°C
specifications by 3 dB.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
THERMAL RESISTANCE
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Careful attention to
PCB thermal design is required.
θJC is the junction to case bottom (channel to package bottom)
thermal resistance.
Table 4. Thermal Resistance
Package Type
θJC
Unit
CC-24-5
100
°C/W
POWER DERATING CURVES
Figure 2. Power Derating vs. Frequency, Low Frequency Detail, TCASE = 85°C
Figure 3. Power Derating vs. Frequency, High Frequency Detail, TCASE = 85°C
ESD CAUTION
2
–16
–14
–12
–10
–8
–6
–4
–2
0
10k
100k
1M
10M
100M
1G
10G
100G
FREQUENCY (Hz)
2
–16
–14
–12
–10
–8
–6
–4
–2
0
26
28
30
32
34
36
46
48
44
40
42
38
50
FREQUENCY (GHz)



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