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FSJ4N65 Scheda tecnica(PDF) 1 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd |
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FSJ4N65 Scheda tecnica(HTML) 1 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd |
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1 / 11 page  ROUM Semiconductor Technology CO.,LTD. Rev. 1.0 www.roum.cn Page 1 of 11 FSJ4N65 1 Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. Which accords with the RoHS standard. 2 Features ● New technology for high voltage device ● Low on-resistance and low conduction losses ● Small package ● Ultra Low Gate Charge cause lower driving requirements ● 100% Single Pulse Avalanche Energy Test ● 100% ΔV DS Test 3 Applications ● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） 4A 650V N-channel Super Junction Power MOSFET Ⅱ 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID（T=25℃） （T=100℃） 4 * A 2.5 * A Drain Current(Pulsed) (Note 3) IDM(Pluse) 12 * A Single Pulse Avalanche Energy (Note 1) EAS 130 mJ Peak Diode Recovery dv/dt (Note 2) dv/dt 50 V/ns Total Dissipation Ta=25℃ Ptot 1.56 W TC=25℃ Ptot 21 W Junction Temperature Tj 150 ℃ storage Temperature Tstg -55～150 ℃ Repetitive Avalanche energy EAR 0.2 mJ Avalanche current IAR 2 A * limited by maximum junction temperature 4.2 Thermal Characteristics PARAMETER SYMBOL VALUE UNIT Thermal Resistance Junction to Case-sink RthJC 4.39 ℃/W Thermal Resistance Junction to Ambient RthJA 80 ℃/W VDSS = 650V RDS(on) （TYP)= 1.0Ω ID = 4A TO-220F 1 2 3 4 5 6 7 8 A B C D 8 7 6 5 4 3 2 1 D C B A Ti t le N u m b er R ev i s io n S i ze D D ate: 1 0 -A p r-2 0 1 7 S h eet o f F i l e: D :\ Pr og ram F i l es \p ro tel 99 s e\文件夹\ W X D H D raw n B y : 3 1 2 G S D |
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