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FSJ4N65 Scheda tecnica(PDF) 2 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd

Il numero della parte FSJ4N65
Spiegazioni elettronici  4A 650V N-channel Super Junction Power MOSFET ?
PDF  11 Pages
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Produttore elettronici  WXDH [Jiangsu Donghai Semiconductor Technology Co.,Ltd]
Homepage  http://www.jswxdh.cn
Logo WXDH - Jiangsu Donghai Semiconductor Technology Co.,Ltd

FSJ4N65 Scheda tecnica(HTML) 2 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd

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ROUM Semiconductor Technology CO.,LTD.
Rev. 1.0
www.roum.cn
Page 2 of 11
FSJ4N65
4.3 Electrical Characteristics(Tc=25℃,unless otherwise noted)
PARAMETER
SYMBOL
Test Condition
VALUE
UNIT
MIN
TYP
MAX
Off Characteristics
Drain-source
Breakdown
Voltage
BVDSS
ID=250μA,VGS=0V
650
--
--
V
Drain-to-Source
Leakage
Current
IDSS
VDS=650V,VGS=0V,TC=25℃
--
--
1
μA
VDS=650V,VGS=0V,TC=125℃
--
--
50
μA
Gate-to-Source
Forward
Leakage
IGSSF
VGS=+30V
--
--
100
nA
Gate-to-Source
Reverse
Leakage
IGSSR
VGS=-30V
--
--
-100
nA
On Characteristics
(Note 5)
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250μA
2.5
3
3.5
V
Drain-source on
Resistance
RDS(on)
VGS=10V,ID=2.5A
--
1
1.2
Ω
Dynamic Characteristics
(Note 6)
Forward Transfer
conductance
gfs
VDS=20V,ID=2.5A
--
4
--
S
Input Capacitance
Ciss
VGS=0V,VDS=50V,f=1.0MHz
--
280
--
pF
Output Capacitance
Coss
--
26
--
Reverse Transfer
Capacitance
Crss
--
2.3
--
Switching Characteristics
(note6)
Turn-on Delay Time
td(on)
ID=2.5A,
VDD=380V,
RG=20Ω
VGS=10V
--
6
--
nS
Turn-on Rise Time
tr
--
3
--
nS
Turn-off Delay Time
td(off)
--
48
60
nS
Turn-off Fall Time
tf
--
8
15
nS
Total Gate Charge
Qg
ID=4A,VDD=480V,VGS=10V
--
6.5
--
nC
Gate-to-Source Charge
Qgs
--
1.3
--
Gate-to-Drain(“Miller”)Ch
arge
Qgd
--
2.5
--
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
VFSD
VGS=0V,IS=4A
--
1
1.3
V
Diode Forward Current
(Note 2)
IS
--
--
4
A
Reverse Recovery Time
trr
TJ=25℃,IS=4A,
dIi/dt=100A/μS,VGS=0V
--
150
--
nS
Reverse Recovery
Charge
Qrr
--
0.85
--
uC
Maximum Pulsed
Current(Body Diode)
ISM
--
11
--
A
Notes：
1. VDD=50V,VG=10V, R G =25Ω, Start TJ=25℃.
2. ISD=4A,di/dt≤100A/μs,VDD≤BVDSS, Start TJ=25℃.
3: Repetitive rating, pulse width limited by maximum junction temperature.
4: Surface mounted on FR4 Board, t≤10sec.
5: Pulse width ≤ 300μs, duty cycle ≤ 2%.
6: Guaranteed by design, not subject to production.



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