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AS29F200 Scheda tecnica(PDF) 17 Page - Alliance Semiconductor Corporation

Il numero della parte AS29F200
Spiegazioni elettronici  5V 256K x 8/128K x 8 CMOS FLASH EEPROM
PDF  20 Pages
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Produttore elettronici  ALSC [Alliance Semiconductor Corporation]
Homepage  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS29F200 Scheda tecnica(HTML) 17 Page - Alliance Semiconductor Corporation

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Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions outside those indicated in the operational sections of this specification is notimplied. Exposure to absolute max-
imum rating conditions for extended periods may affect reliability.
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Includes all pins except VCC. Test conditions: VCC = 5.0V, one pin at a time.
Parameter
Symbol
Min
Typical
Max
Unit
Supply voltage
VCC
+4.5
5.0
+5.5
V
VSS
00
0V
Input voltage
VIH
2.0
-
VCC + 0.5
V
VIL
–0.5
-
0.8
V
Parameter
Symbol
Min
Max
Unit
Input voltage (Input or DQ pin)
VIN
–2.0
+7.0
V
Input Voltage (A9 pin, OE, RESET)VIN
–2.0
+13.0
V
Power supply voltage
VCC
-0.5
+5.5
V
Operating temperature
TOPR
–55
+125
°C
Storage temperature (Plastic)
TSTG
–65
+150
°C
Short circuit output current
IOUT
-200
mA
Parameter
Min
Max
Unit
Input voltage with respect to VSS on A9, OE, and RESET pin
-1.0
+13.0
V
Input voltage with respect to VSS on all DQ, address and control pins
-1.0
VCC+1.0
V
Current
-100
+100
mA
100 pF*
Device under Test
*including scope
and jig capacitance
VSS
Test condition
-170
-200
Unit
Output load
1 TTL gate
Input rise and fall times
5
ns
Input pulse levels
0.0-2.0
V
Input timing measurement reference levels
1.0
V
Output timing measurement reference levels
1.0



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