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AS29F200 Scheda tecnica(PDF) 9 Page - Alliance Semiconductor Corporation

Il numero della parte AS29F200
Spiegazioni elettronici  5V 256K x 8/128K x 8 CMOS FLASH EEPROM
PDF  20 Pages
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Produttore elettronici  ALSC [Alliance Semiconductor Corporation]
Homepage  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS29F200 Scheda tecnica(HTML) 9 Page - Alliance Semiconductor Corporation

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† The system software should check the status of DQ3 prior to and
following each subsequent sector erase command to ensure command
completion. The device may not have accepted the command if DQ3 is
high on second status check.
Write program command sequence
(see below)
DATA poll device
Verify byte?
Programming completed
5555h/AAh
2AAAh/55h
5555h/A0h
Program address/program data
Program command sequence
×16 mode (address/command):
NO
YES
5555h/AAh
2AAAh/55h
5555h/80h
Chip erase command sequence
5555h/AAh
2AAAh/55h
5555h/10h
Sector erase command sequence
Erase complete
Sector address/30h
Sector address/30h
Sector address/30h
Optional multiple
sector erase commands†
×16 mode (address/command):
×16 mode (address/command):
5555h/AAh
2AAAh/55h
5555h/80h
5555h/AAh
2AAAh/55h
DATA polling or toggle bit
successfully completed
Write erase command sequence
(see below)



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