TP0610TG datasheet(1/14 Pages) MICROCHIP

Il numero della parte	TP0610TG

Spiegazioni elettronici	P-Channel Enhancement-Mode Vertical DMOS FET

PDF	14 Pages

Scroll/Zoom	100%

Produttore elettronici	MICROCHIP [Microchip Technology]

Homepage	http://www.microchip.com

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1 / 14 page

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2019-2020 Microchip Technology Inc.

DS20005701B-page 1

TP0610T

Features

• High Input Impedance and High Gain

• Low Power Drive Requirement

• Ease of Paralleling

• Low CISS and Fast Switching Speeds

• Excellent Thermal Stability

• Integral Source-Drain Diode

• Free from Secondary Breakdown

Applications

• Logic-Level Interfaces (Ideal for TTL and CMOS)

• Solid-State Relays

• Battery-Operated Systems

• Photo-Voltaic Drives

• Analog Switches

• Power Management

• Telecommunication Switches

General Description

The TP0610T is a low-threshold, Enhancement-mode

(normally-off) transistor that utilizes a vertical DMOS

structure and a well-proven silicon gate manufacturing

process. This combination produces a device with the

power handling capabilities of bipolar transistors and

the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of

all MOS structures, this device is free from thermal

runaway and thermally induced secondary breakdown.

Microchip’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications

where very low threshold voltage, high breakdown

voltage, high input impedance, low input capacitance,

and fast switching speeds are desired.

Package Type

3-lead SOT-23 (TO-236AB)

(Top view)

See Table 3-1 for pin information.

DRAIN

SOURCE

GATE

P-Channel Enhancement-Mode Vertical DMOS FET

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