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ED14R126-12AMBTEL Scheda tecnica(PDF) 3 Page - Eorex Corporation |
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ED14R126-12AMBTEL Scheda tecnica(HTML) 3 Page - Eorex Corporation |
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3 / 51 page ![]() eorex ED382R517-2G4SA-H9R 3 www.eorex.com Key Parameters MT/s Grade tCK (ns) CAS Latency (tCK) tRCD (ns) tRP (ns) tRAS (ns) tRC (ns) CL-tRCD-tRP DDR3-1333 -17 1.5 9 13.5 (13.125)* 13.5 (13.125)* 36 49.5 (49.125)* 9-9-9 DDR3-1600 -16 1.25 11 13.75 (13.125)* 13.75 (13.125)* 35 48.75 (48.125)* 11-11-11 *Eorex DRAM devices support optional downbinning to CL11, CL9, and CL7. SPD setting is programmed to match. Speed Grade Grade Frequency [MHz] Remark CL6 CL7 CL8 CL9 CL10 CL11 -18 800 1066 1066 -17 800 1066 1066 1333 1333 -16 800 1066 1066 1333 1333 1600 Address Table 2GB(1Rx8) 4GB(2Rx8) 4GB(1Rx4) 8GB(4Rx8) 8GB(2Rx4) 16GB(4Rx4) Refresh Method 8K/64ms 8K/64ms 8K/64ms 8K/64ms 8K/64ms 8K/64ms Row Address A0-A13 A0-A13 A0-A13 A0-A13 A0-A13 A0-A13 Column Address A0-A9 A0-A9 A0-A9,A11 A0-A9 A0-A9,A11 A0-A9,A11 Bank Address BA0-BA2 BA0-BA2 BA0-BA2 BA0-BA2 BA0-BA2 BA0-BA2 Page Size 1KB 1KB 1KB 1KB 1KB 1KB |
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